With the accelerated development of 5G communications, electric vehicles, carbon neutrality, etc., gallium nitride (GaN) has the advantages of higher efficiency, energy saving and higher power. Hexawave has top research and developed team on gallium arsenide high frequency products, investing in the development of energy-saving related components. The innovative application of the excellent performance of GaN (gallium nitride) materials has successfully developed a gallium nitride power switching transistor with an on-resistance lower than that of silicon, even better than mechanical relay contacts. HexaGaN has ultra-high efficiency, small size and extremely low thermal loss.

Model VDS (V) IDS (A) RDS(on) (mΩ) Ciss (pF) Coss(pF) Crss(pF) QG(nC) Package
HWP601 650 11 150 70 20 0.4 2.2 DFN 5x6
HWP602 650 8 225 54 14 0.3 1.5 DFN 5x6
HWP603 650 11 150 70 20 0.4 2.2 DFN 8x8
HWP604 650 8 225 54 14 0.3 1.5 DFN 8x8